A fast transient low dropout regulator on 90 nm technology

  • Héctor Iván Gómez-Ortiz Ph.D (c) Ingeniería Fundación Universitaria de San Gil, UNISANGIL San Gil
  • Carlos Andrés Neira-Triana Ing. Electrónico (c). Fundación Universitaria de San Gil, UNISANGIL San Gil
  • Francisco Angarita-Cediel Ing. Electrónico (c). Fundación Universitaria de San Gil, UNISANGIL San Gil
Keywords: Fast transient response, linear regulator, output capacitor less, robust

Abstract

This paper presents the design of a low dropout linear regulator for portable applications. The proposed circuit consists of a simple amplification scheme with a single gain stage plus the power transistor.  Moreover, the circuit uses a current mirror to add part of input transconductance to the output, increasing the gain without load current. The simulations performed for the designed circuit in SYNOPSYS for a 90 nm technology show a robust performance to process, voltage and temperature variations with a settling time of 1μs. Also, the frequency response shows the minimum gain of 43 dB and a power supply rejection of -25 dB at 100 KHz. The power consumption without load current was 14 μA and it can deliver a maximum load current of 25 mA.

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Published
2015-06-16
How to Cite
Gómez-Ortiz, H., Neira-Triana, C., & Angarita-Cediel, F. (2015). A fast transient low dropout regulator on 90 nm technology. ITECKNE, 12(1), 76-83. https://doi.org/https://doi.org/10.15332/iteckne.v12i1.824
Section
Research and Innovation Articles